型号 IPD03N03LB G
厂商 Infineon Technologies
描述 MOSFET N-CH 30V 90A TO-252
IPD03N03LB G PDF
代理商 IPD03N03LB G
产品变化通告 Product Discontinuation 04/Jun/2009
产品目录绘图 Mosfets D-PAK, D2-PAK, TO-252
标准包装 1
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 90A
开态Rds(最大)@ Id, Vgs @ 25° C 3.3 毫欧 @ 60A,10V
Id 时的 Vgs(th)(最大) 2V @ 70µA
闸电荷(Qg) @ Vgs 40nC @ 5V
输入电容 (Ciss) @ Vds 5200pF @ 15V
功率 - 最大 115W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252-3
包装 剪切带 (CT)
其它名称 IPD03N03LBGINCT
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